RF amplifier module 433 MHz (415-485 MHz), Gan 100W, SMA

RF amplifier module 433 MHz (415–485 MHz) based on GaN technology with a power of up to 100 W- is a high-performance radio frequency amplifier for working with RF-signals in the range 415-485 MHz. Thanks to the use of gallium nitride transistors, the module provides high energy efficiency up to 60%, stable output parameters and minimized power losses during long-term operation.

The compact design and mounting holes for M3 screws simplify the integration of the module into professional RF-systems, engineering solutions, laboratory and test benches.

Technical characteristics:

• Frequency range: 415-485 MHz
• Operating voltage: 28 V
• Output power: 100W (49 dBm)
• Current consumption: ≤5.2 A
• Efficiency: 60%
• Standing Wave Ratio (VSWR): ≤1.30
• Operating Temperature Range: -40°C to +55°C
• Power Stability: 1.0 dB at -20°C to +75°C
• Power Requirements: ≥6 A
• Connector: SMA
• Dimensions: 38 x 163.2 x 19.5 mm
• Mounting Hole Dimensions: 33.6x159 mm, Screw Mount M3*10

Advantages:

• High energy efficiency up to 60% - GaN technology provides increased efficiency and reduced power consumption.
• Wide operating range 415–485 MHz - suitable for various RF applications in the 433 MHz sub-band.
• Stable operating parameters - reliable power transmission under various temperature conditions.
• Compact dimensions - convenient integration into various RF and engineering systems.
• Easy installation- Standard M3 mounting for quick installation in the case or on the radiator.